About Diodes Incorporated
来源:http://www.taiheth.com 作者:泰河盛电子 2023年08月11
Diodes 公司 (Nasdaq:DIOD) 是标准普尔小型股 600 指数和罗素 3000 指数成员公司,为高质量应用特定标准产品全球制造商与供货商,产品涵盖广泛领域,包括分立、逻辑、模拟及混合讯号半导体市场。Diodes 亦为汽车、工业、运算、消费性电子及通讯等市场提供服务。
Diodes 的产品包括二极管、整流器、晶体管、MOSFET、GPP桥、GPP整流器、保护装置、特定功能数组、单闸极逻辑、放大器与比较器、霍尔效应与温度传感器、电源管理设备,包括AC-DC 转换器与控制器、DC-DC 开关与线性稳压器,以及电压参考与LED驱动器;以及特殊功能装置,例如 USB 电源开关、负载开关、电压监控器及马达控制器。Diodes 亦提供高速信号的定时、连接、开关与信号完整性解决方案。
Diodes 公司总部及美洲销售办公室位于美国德州普拉诺 (Plano) 与加州米尔皮塔斯 (Milpitas)。设计、营销与工程中心位于普拉诺、米尔皮塔斯、台北、桃园、竹北、上海、扬州、英国奥尔德姆及德国纽豪斯 。Diodes 的晶圆生产设施位于美国缅因州南波特兰;英国格林诺克奥尔德姆;中国上海和无锡;还有基隆和新竹。Diodes晶振 在中国上海、济南、成都、无锡、中坜和基隆以及德国纽豪斯设有组装与测试设施。另外在多个据点设有工程、销售、仓储及物流办公室,包括台北、香港、上海、深圳、武汉、扬州;英国奥尔德姆;南韩城南市以及德国慕尼黑、法兰克福,并于世界各地设有支持办公室。
公司生产设施已通过国际公认标准ISO-9001:2015、ISO 14001:2015和IATF16949:2016的品质认证。
Diodes 公司目前拥有 C-TPAT 认证。
上述质量奖反映 Diodes 公司优异的品管技术,并进一步提升我们在重视质量与一致性的 OEM 业者心目中极佳厂商的地位。
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the automotive, industrial, computing, consumer electronics, and communications markets.
Our diverse product portfolio covers diodes; rectifiers; transistors; MOSFETs; SiC diodes and MOSFETs; protection devices; logic; voltage translators; amplifiers and comparators; sensors; and power management devices such as AC-DC converters, DC-DC switching, linear voltage regulators, voltage references, LED drivers, power switches, and voltage supervisors. We also have timing and connectivity solutions including clock ICs, crystal oscillators, PCIe packet switches, multi-protocol switches, interface products, and signal integrity solutions for high-speed signals.
Diodes’ corporate headquarters and Americas’ sales offices are located in Plano, Texas, and Milpitas, California. Design, marketing, and engineering centers are located in Plano, Milpitas, U.S.; Taipei, Taoyuan City, Zhubei City, Taiwan; Shanghai, Yangzhou, China; Oldham, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in South Portland, Maine, U.S., Oldham, Greenock, UK; Shanghai and Wuxi, China; and Keelung and Hsinchu, Taiwan. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Wuxi, China; Neuhaus, Germany; and Jhongli and Keelung, Taiwan. Additional engineering, sales, warehouse, and logistics offices are located in Taipei, Taiwan; Hong Kong; Oldham, UK; Shanghai, Shenzhen, Wuhan, and Yangzhou, China; Seongnam-si, South Korea; and Munich, Frankfurt, Germany; with support offices throughout the world.
The company’s manufacturing facilities have achieved certifications in the internationally recognized standards of ISO 9001:2015, ISO 14001:2015, and, for automotive products, IATF 16949:2016.
Diodes Incorporated is also C-TPAT certified.高端晶体
These Quality Awards reflect the superior quality-control techniques established at Diodes Incorporated and further enhance our credibility as a vendor-of-choice to OEMs increasingly concerned with quality and consistency.
DIODES原厂代码 | 生产商品牌 | 型号 | 类型 | 频率 | 输出 | 电压 | 频率稳定度 | 工作温度 |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | LVCMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | LVCMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2500050 | Diodes晶振 | FD | XO | 25MHz | CMOS | 2.5V | ±50ppm | -20°C ~ 70°C |
FD2500050 | Diodes晶振 | FD | XO | 25MHz | LVCMOS | 2.5V | ±50ppm | -20°C ~ 70°C |
FD6250012 | Diodes晶振 | FD | XO | 62.5MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD0100003 | Diodes晶振 | FD | XO | 1MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0180008 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0180009 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0180010 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0200013 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0200014 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0200015 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0350006 | Diodes晶振 | FD | XO | 3.579545MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0360017 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0360018 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0360019 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0400021 | Diodes晶振 | FD | XO | 4MHz | CMOS | 2.5V | ±25ppm | -20°C ~ 70°C |
FD0500003 | Diodes晶振 | FD | XO | 5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0600006 | Diodes晶振 | FD | XO | 6MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0610002 | Diodes晶振 | FD | XO | 6.144MHz | CMOS | 3.3V | ±20ppm | -20°C ~ 70°C |
FD0730013 | Diodes晶振 | FD | XO | 7.3728MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0800013 | Diodes晶振 | FD | XO | 8MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0810003 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0810004 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0810005 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0820001 | Diodes晶振 | FD | XO | 8.25MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1000015 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1000016 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1000017 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1100008 | Diodes晶振 | FD | XO | 11.0592MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1120009 | Diodes晶振 | FD | XO | 11.2896MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD1200028 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1200029 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1200030 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1220014 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1220015 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1220016 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1350007 | Diodes晶振 | FD | XO | 13.5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1430016 | Diodes晶振 | FD | XO | 14.3181MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1430018 | Diodes晶振 | FD | XO | 14.3181MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1470015 | Diodes晶振 | FD | XO | 14.7456MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1470017 | Diodes晶振 | FD | XO | 14.7456MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1600015 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1600016 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1600017 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1630009 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1630010 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1630011 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1630012 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 2.5V | ±50ppm | -40°C ~ 85°C |
FD1650001 | Diodes晶振 | FD | XO | 16.5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1800003 | Diodes晶振 | FD | XO | 18MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1840014 | Diodes晶振 | FD | XO | 18.432MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1940001 | Diodes晶振 | FD | XO | 19.44MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
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